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US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Semiconductor device including vertical channel pattern and method for fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,702, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor device including vertical c... और पढ़ें


US Patent Issued to UNITED MICROELECTRONICS on Aug. 11 for "Semiconductor structure and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,703, issued on Aug. 11, was assigned to UNITED MICROELECTRONICS CORP. (Hsinchu, Taiwan). "Semiconductor structure and method for fabricatin... और पढ़ें


US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 11 for "Method of forming a semiconductor device having gate spacers with regions of diffused silicon germanium" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,704, issued on Aug. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Method of forming a semiconductor d... और पढ़ें


US Patent Issued to STMicroelectronics (Crolles 2) on Aug. 11 for "Siliciding method" (French Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,705, issued on Aug. 11, was assigned to STMicroelectronics (Crolles 2) SAS (Crolles, France). "Siliciding method" was invented by Magali Gr... और पढ़ें


US Patent Issued to HITACHI POWER SEMICONDUCTOR DEVICE on Aug. 11 for "Semiconductor device, method for manufacturing the semiconductor device, and power conversion device" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,706, issued on Aug. 11, was assigned to HITACHI POWER SEMICONDUCTOR DEVICE LTD. (Ibaraki, Japan). "Semiconductor device, method for manufac... और पढ़ें


US Patent Issued to Semiconductor Manufacturing International (Shanghai) on Aug. 11 for "Semiconductor structure and method for forming same" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,708, issued on Aug. 11, was assigned to Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai). "Semiconductor structure and... और पढ़ें


US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 11 for "Method of forming semiconductor device having isolation structure" (Taiwanese Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,709, issued on Aug. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan). "Method of forming semiconductor de... और पढ़ें


US Patent Issued to FUJI ELECTRIC on Aug. 11 for "Semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,710, issued on Aug. 11, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Semiconductor device" was invented by Akihiro Jonishi (M... और पढ़ें


US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Semiconductor device with CMOS inverter" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,711, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device with CMOS inverter" was... और पढ़ें


US Patent Issued to Intel on Aug. 11 for "Amorphized subfins using backside implantation" (Oregon Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,712, issued on Aug. 11, was assigned to Intel Corp. (Santa Clara, Calif.). "Amorphized subfins using backside implantation" was invented by... और पढ़ें